广东星河微电子有限公司

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA (max) at VGS = −30 V • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS −50 V Gate current IG 10 mA Drain power dissipation PD 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc)